MPQ2222-TIN-LEAD vs MPQ2222 Comparaison
Comparaison détaillée côte à côte de MPQ2222-TIN-LEAD par Central Semiconductor et MPQ2222 par Central Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ ActifCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ ActifComparaison des spécifications
| Paramètre | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Marque | Central Semiconductor | Central Semiconductor |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,54 | $0,39 |
| Transistor Configuration | Quad (4 independent NPN) | — |
| Type de transistor | NPN Bipolar Junction Transistor (BJT) | — |
| Tension collecteur-émetteur (Vceo) | 40 V | — |
| Tension collecteur-base (Vcbo) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Tension émetteur-base (Vebo) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Courant de collecteur (Ic) | 500 mA | — |
| Power Dissipation | 650 mW | — |
| Fréquence de transition (ft) | 200 MHz | 200 MHz |
| Boîtier | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Type de montage | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | — |
| Molding Compound | EMC GREEN, halogen-free | — |
| Application | General purpose amplifier and switching | — |
| Equivalent Base Type | Quad 2N2222-type | — |
| Statut RoHS | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |