MPQ2222-TIN-LEAD vs MPQ2222 Comparação
Comparação detalhada lado a lado de MPQ2222-TIN-LEAD por Central Semiconductor e MPQ2222 por Central Semiconductor. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ AtivoCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AtivoComparação de especificações
| Parâmetro | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Marca | Central Semiconductor | Central Semiconductor |
| Categoria | Transistors | Transistors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,54 | $0,39 |
| Transistor Configuration | Quad (4 independent NPN) | — |
| Tipo de transistor | NPN Bipolar Junction Transistor (BJT) | — |
| Tensão coletor-emissor (Vceo) | 40 V | — |
| Tensão coletor-base (Vcbo) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Tensão emissor-base (Vebo) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Corrente de coletor (Ic) | 500 mA | — |
| Power Dissipation | 650 mW | — |
| Frequência de transição (ft) | 200 MHz | 200 MHz |
| Encapsulamento | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Tipo de montagem | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | — |
| Molding Compound | EMC GREEN, halogen-free | — |
| Application | General purpose amplifier and switching | — |
| Equivalent Base Type | Quad 2N2222-type | — |
| Status RoHS | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |