MPX2100DP vs MPX2100D Vergleich
Detaillierter Direktvergleich von MPX2100DP von NXP Semiconductors und MPX2100D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX2100DP | MPX2100D |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,95 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Full-Scale Span (Typical) | 40 mV (at 10 V excitation) | 40 mV at 10 V excitation |
| Zero Pressure Offset | [DATA_NEEDED: zero pressure offset] | — |
| Linearity | 1% typical | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Versorgungsspannung | 10 V DC typical | — |
| Versorgungsstrom | [DATA_NEEDED: supply current] | — |
| Ausgangstyp | Analog mV (Wheatstone Bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Betriebstemperatur | 0C to +85C (compensated) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Port Configuration | Dual port, axial tube, 4.93 mm (0.19 in) | — |
| Gehäuse / Bauform | 4-SIP Module (Case 344C-01) | — |
| Montageart | Through-Hole | Through-hole SIP module |
| Technology | Silicon piezoresistive, on-chip temperature compensation | Silicon piezoresistive MEMS strain-gauge bridge |
| RoHS-Status | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Gehäuse | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Betriebstemperaturbereich | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |