MPX2100DP vs MPX2100D Comparaison
Comparaison détaillée côte à côte de MPX2100DP par NXP Semiconductors et MPX2100D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MPX2100DP | MPX2100D |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,95 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Full-Scale Span (Typical) | 40 mV (at 10 V excitation) | 40 mV at 10 V excitation |
| Zero Pressure Offset | [DATA_NEEDED: zero pressure offset] | — |
| Linearity | 1% typical | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Tension d'alimentation | 10 V DC typical | — |
| Courant d'alimentation | [DATA_NEEDED: supply current] | — |
| Type de sortie | Analog mV (Wheatstone Bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Température de fonctionnement | 0C to +85C (compensated) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Port Configuration | Dual port, axial tube, 4.93 mm (0.19 in) | — |
| Boîtier / Format | 4-SIP Module (Case 344C-01) | — |
| Type de montage | Through-Hole | Through-hole SIP module |
| Technology | Silicon piezoresistive, on-chip temperature compensation | Silicon piezoresistive MEMS strain-gauge bridge |
| Statut RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Boîtier | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Plage de température de fonctionnement | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |