MPX2100DP vs MPX2100D Comparação
Comparação detalhada lado a lado de MPX2100DP por NXP Semiconductors e MPX2100D por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MPX2100DP | MPX2100D |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Pressure Sensors | Pressure Sensors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $5,95 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Full-Scale Span (Typical) | 40 mV (at 10 V excitation) | 40 mV at 10 V excitation |
| Zero Pressure Offset | [DATA_NEEDED: zero pressure offset] | — |
| Linearity | 1% typical | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Tensão de alimentação | 10 V DC typical | — |
| Corrente de alimentação | [DATA_NEEDED: supply current] | — |
| Tipo de saída | Analog mV (Wheatstone Bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Temperatura de operação | 0C to +85C (compensated) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Port Configuration | Dual port, axial tube, 4.93 mm (0.19 in) | — |
| Encapsulamento / Caixa | 4-SIP Module (Case 344C-01) | — |
| Tipo de montagem | Through-Hole | Through-hole SIP module |
| Technology | Silicon piezoresistive, on-chip temperature compensation | Silicon piezoresistive MEMS strain-gauge bridge |
| Status RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Encapsulamento | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Faixa de temperatura de operação | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |