MPX2100GP vs MPX2102GP Vergleich

Detaillierter Direktvergleich von MPX2100GP von NXP Semiconductors und MPX2102GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPX2100GP MPX2100GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2100GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2100GP ✓ Aktiv
NXP Semiconductors
MPX2102GP MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP ✓ Aktiv

Spezifikationsvergleich

Parameter MPX2100GP MPX2102GP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,40 $5,40
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 to 14.5 psi (0 to 100 kPa) 0 kPa to 100 kPa (0 PSI to 14.5 PSI)
Maximum Overpressure 58.02 psi (400 kPa) [DATA_NEEDED: maximum overpressure rating]
Ausgangstyp Wheatstone Bridge (analog voltage, ratiometric) —
Full-Scale Span 40 mV typical at 10 V supply —
Offset 0 mV minimum at 0 kPa —
Versorgungsspannung 10 V typical (ratiometric) —
Maximum Operating Current 6 mA —
Port Size Male 0.19 in (4.93 mm) barbed tube —
Port Style Barbed —
Gehäuse 4-SIP Module (Unibody through-hole) 4-SIP Module (Unibody GP)
Montageart Through-Hole Through-Hole SIP
Temperature Compensation On-chip, calibrated —
Betriebstemperatur [DATA_NEEDED: operating temperature range] 0 C to +85 C
Technology Silicon piezoresistive, MEMS —
Termination Style PCB (SIP pins) —
RoHS-Status unknown Compliant
Full-Scale Output (VoutFS) — 40 mV at 10 V excitation
Ausgangsspannungsbereich — 0 mV to 40 mV
Excitation Voltage — 10 V typical (DC)
Sensitivity — 0.4 mV/kPa nominal
Linearity — 1.0 % maximum
Pressure Port — Male 0.19 in (4.93 mm) tube
Storage Temperature — [DATA_NEEDED: storage temperature range]
Temperature Compensation Range — 0 C to +85 C (on-chip)
Sensor Technology — Silicon piezoresistive, monolithic diaphragm
Offset (null) — 0 mV to 1 mV typical

Datenblätter & Ressourcen

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