MPX2100GP vs MPX2102GP Comparação
Comparação detalhada lado a lado de MPX2100GP por NXP Semiconductors e MPX2102GP por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MPX2100GP | MPX2102GP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Pressure Sensors | Pressure Sensors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $10,40 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 14.5 psi (0 to 100 kPa) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | 58.02 psi (400 kPa) | [DATA_NEEDED: maximum overpressure rating] |
| Tipo de saída | Wheatstone Bridge (analog voltage, ratiometric) | — |
| Full-Scale Span | 40 mV typical at 10 V supply | — |
| Offset | 0 mV minimum at 0 kPa | — |
| Tensão de alimentação | 10 V typical (ratiometric) | — |
| Maximum Operating Current | 6 mA | — |
| Port Size | Male 0.19 in (4.93 mm) barbed tube | — |
| Port Style | Barbed | — |
| Encapsulamento | 4-SIP Module (Unibody through-hole) | 4-SIP Module (Unibody GP) |
| Tipo de montagem | Through-Hole | Through-Hole SIP |
| Temperature Compensation | On-chip, calibrated | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | 0 C to +85 C |
| Technology | Silicon piezoresistive, MEMS | — |
| Termination Style | PCB (SIP pins) | — |
| Status RoHS | unknown | Compliant |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Faixa de tensão de saída | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |