MPX2100GP vs MPX2102GP Comparaison
Comparaison détaillée côte à côte de MPX2100GP par NXP Semiconductors et MPX2102GP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MPX2100GP | MPX2102GP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10,40 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 14.5 psi (0 to 100 kPa) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | 58.02 psi (400 kPa) | [DATA_NEEDED: maximum overpressure rating] |
| Type de sortie | Wheatstone Bridge (analog voltage, ratiometric) | — |
| Full-Scale Span | 40 mV typical at 10 V supply | — |
| Offset | 0 mV minimum at 0 kPa | — |
| Tension d'alimentation | 10 V typical (ratiometric) | — |
| Maximum Operating Current | 6 mA | — |
| Port Size | Male 0.19 in (4.93 mm) barbed tube | — |
| Port Style | Barbed | — |
| Boîtier | 4-SIP Module (Unibody through-hole) | 4-SIP Module (Unibody GP) |
| Type de montage | Through-Hole | Through-Hole SIP |
| Temperature Compensation | On-chip, calibrated | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | 0 C to +85 C |
| Technology | Silicon piezoresistive, MEMS | — |
| Termination Style | PCB (SIP pins) | — |
| Statut RoHS | unknown | Compliant |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Plage de tension de sortie | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |