MPX2100GP vs MPX2102GP तुलना
विस्तृत दोनों ओर की तुलना MPX2100GP द्वारा NXP Semiconductors और MPX2102GP द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MPX2100GP | MPX2102GP |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 to 14.5 psi (0 to 100 kPa) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | 58.02 psi (400 kPa) | [DATA_NEEDED: maximum overpressure rating] |
| आउटपुट प्रकार | Wheatstone Bridge (analog voltage, ratiometric) | — |
| Full-Scale Span | 40 mV typical at 10 V supply | — |
| Offset | 0 mV minimum at 0 kPa | — |
| सप्लाई वोल्टेज | 10 V typical (ratiometric) | — |
| Maximum Operating Current | 6 mA | — |
| Port Size | Male 0.19 in (4.93 mm) barbed tube | — |
| Port Style | Barbed | — |
| पैकेज | 4-SIP Module (Unibody through-hole) | 4-SIP Module (Unibody GP) |
| माउंटिंग प्रकार | Through-Hole | Through-Hole SIP |
| Temperature Compensation | On-chip, calibrated | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | 0 C to +85 C |
| Technology | Silicon piezoresistive, MEMS | — |
| Termination Style | PCB (SIP pins) | — |
| RoHS स्थिति | unknown | Compliant |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| आउटपुट वोल्टेज रेंज | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |