MPX2102DP vs MPX2102GP Vergleich
Detaillierter Direktvergleich von MPX2102DP von NXP Semiconductors und MPX2102GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP
MPX2102DP ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MPX2102DP | MPX2102GP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,85 | $5,40 |
| Sensortyp | Piezoresistive Pressure Sensor | — |
| Pressure Type | Differential (Dual Port) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Supply Voltage (Excitation) | 10 V typical (max specified separately) | — |
| Port Size | Male, 0.19" (4.93 mm) tube, Dual | — |
| Betriebstemperaturbereich | -40 °C to +125 °C | — |
| Compensated Temperature Range | 0 °C to +85 °C | — |
| Gehäuse / Bauform | 4-SIP Module (Unibody) | — |
| Termination Style | Through-Hole PCB | — |
| Ausgangstyp | Analog Wheatstone Bridge (ratiometric mV) | — |
| Technology | On-chip Temperature Compensated Silicon | — |
| Linearity | [DATA_NEEDED: typical linearity %FS] | 1.0 % maximum |
| Sensitivity | [DATA_NEEDED: mV/V typical] | 0.4 mV/kPa nominal |
| Montageart | Through-Hole, Dual Vertical Port | Through-Hole SIP |
| Series | MPX2102 | — |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Ausgangsspannungsbereich | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Betriebstemperatur | — | 0 C to +85 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Gehäuse | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |
| RoHS-Status | — | Compliant |