MPX2102DP vs MPX2102GP Comparação
Comparação detalhada lado a lado de MPX2102DP por NXP Semiconductors e MPX2102GP por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP
MPX2102DP ⚠ Última compraComparação de especificações
| Parâmetro | MPX2102DP | MPX2102GP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Pressure Sensors | Pressure Sensors |
| Status do ciclo de vida | Última compra | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $9,85 | $5,40 |
| Tipo de sensor | Piezoresistive Pressure Sensor | — |
| Pressure Type | Differential (Dual Port) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Supply Voltage (Excitation) | 10 V typical (max specified separately) | — |
| Port Size | Male, 0.19" (4.93 mm) tube, Dual | — |
| Faixa de temperatura de operação | -40 °C to +125 °C | — |
| Compensated Temperature Range | 0 °C to +85 °C | — |
| Encapsulamento / Caixa | 4-SIP Module (Unibody) | — |
| Termination Style | Through-Hole PCB | — |
| Tipo de saída | Analog Wheatstone Bridge (ratiometric mV) | — |
| Technology | On-chip Temperature Compensated Silicon | — |
| Linearity | [DATA_NEEDED: typical linearity %FS] | 1.0 % maximum |
| Sensitivity | [DATA_NEEDED: mV/V typical] | 0.4 mV/kPa nominal |
| Tipo de montagem | Through-Hole, Dual Vertical Port | Through-Hole SIP |
| Series | MPX2102 | — |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Faixa de tensão de saída | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Temperatura de operação | — | 0 C to +85 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Encapsulamento | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |
| Status RoHS | — | Compliant |