MPX2102DP vs MPX2102GP Сравнение
Подробное сравнение бок о бок MPX2102DP от NXP Semiconductors и MPX2102GP от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP
MPX2102DP ⚠ Последняя закупкаСравнение характеристик
| Параметр | MPX2102DP | MPX2102GP |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Последняя закупка | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $9,85 | $5,40 |
| Тип датчика | Piezoresistive Pressure Sensor | — |
| Pressure Type | Differential (Dual Port) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Supply Voltage (Excitation) | 10 V typical (max specified separately) | — |
| Port Size | Male, 0.19" (4.93 mm) tube, Dual | — |
| Диапазон рабочих температур | -40 °C to +125 °C | — |
| Compensated Temperature Range | 0 °C to +85 °C | — |
| Корпус / Типоразмер | 4-SIP Module (Unibody) | — |
| Termination Style | Through-Hole PCB | — |
| Тип выхода | Analog Wheatstone Bridge (ratiometric mV) | — |
| Technology | On-chip Temperature Compensated Silicon | — |
| Linearity | [DATA_NEEDED: typical linearity %FS] | 1.0 % maximum |
| Sensitivity | [DATA_NEEDED: mV/V typical] | 0.4 mV/kPa nominal |
| Тип монтажа | Through-Hole, Dual Vertical Port | Through-Hole SIP |
| Series | MPX2102 | — |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Диапазон выходного напряжения | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Рабочая температура | — | 0 C to +85 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Корпус | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |
| Статус RoHS | — | Compliant |