MPX2102DP vs MPX2102GP Perbandingan

Perbandingan bersamaan detil MPX2102DP dari NXP Semiconductors dan MPX2102GP dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MPX2102DP MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP

MPX2102DP - 100kPa Differential Pressure Sensor, 4-SIP | NXP

MPX2102DP ⚠ Waktu Beli Terakhir
NXP Semiconductors
MPX2102GP MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MPX2102DP MPX2102GP
Merek NXP Semiconductors NXP Semiconductors
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Waktu Pembelian Terakhir Aktif
Tipe Pengukur Piezoresistive Pressure Sensor —
Pressure Type Differential (Dual Port) Vented Gauge
Operating Pressure Range 0 kPa to 100 kPa (0 PSI to 14.5 PSI) 0 kPa to 100 kPa (0 PSI to 14.5 PSI)
Full-Scale Output 0 mV to 40 mV at 10 V excitation —
Supply Voltage (Excitation) 10 V typical (max specified separately) —
Port Size Male, 0.19" (4.93 mm) tube, Dual —
Rentang Suhu Kerja -40 °C to +125 °C —
Compensated Temperature Range 0 °C to +85 °C —
Paket / Case 4-SIP Module (Unibody) —
Termination Style Through-Hole PCB —
Tipe Output Analog Wheatstone Bridge (ratiometric mV) —
Technology On-chip Temperature Compensated Silicon —
Linearity [DATA_NEEDED: typical linearity %FS] 1.0 % maximum
Sensitivity [DATA_NEEDED: mV/V typical] 0.4 mV/kPa nominal
Tipe Mounting Through-Hole, Dual Vertical Port Through-Hole SIP
Series MPX2102 —
Maximum Overpressure — [DATA_NEEDED: maximum overpressure rating]
Full-Scale Output (VoutFS) — 40 mV at 10 V excitation
Rentang Tegangan Output — 0 mV to 40 mV
Excitation Voltage — 10 V typical (DC)
Pressure Port — Male 0.19 in (4.93 mm) tube
Suhu Kerja — 0 C to +85 C
Storage Temperature — [DATA_NEEDED: storage temperature range]
Temperature Compensation Range — 0 C to +85 C (on-chip)
Paket — 4-SIP Module (Unibody GP)
Sensor Technology — Silicon piezoresistive, monolithic diaphragm
Offset (null) — 0 mV to 1 mV typical
Status RoHS — Compliant

Spek dan Sumber

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