MPXM2202AS vs MPXM2202GST1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MPXM2202AS disebabkan oleh NXP Semiconductors dan MPXM2202GST1 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MPXM2202AS MPXM2202AS - 200 kPa Absolute Pressure Sensor, M-PAC | NXP

MPXM2202AS - 200 kPa Absolute Pressure Sensor, M-PAC | NXP

MPXM2202AS ⚠ Bahagian terakhir untuk beli

Pengandingan Spesifikasi

Parametr MPXM2202AS MPXM2202GST1
Merek NXP Semiconductors STMicroelectronics
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Masa Terakhir Dibeli Aktif
Pressure Type Absolute Vented Gauge
Operating Pressure Range 0 kPa to 200 kPa (0 to 29.01 PSI) 0 kPa to 200 kPa (0 psi to 29.01 psi)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] [DATA_NEEDED: maximum overpressure rating]
Jenis Output Analog Wheatstone bridge (differential mV) Analog Wheatstone bridge (millivolt differential)
Full-Scale Output 0 mV to 40 mV at 10 V excitation —
Sensitivity 0.2 mV/kPa (typical) —
Supply Voltage (Excitation) 10 V typical (max per datasheet) —
Arus Pemberi Arus [DATA_NEEDED: typical excitation current] —
Gambaran Suhu Operasi 0C to +85C (compensated) —
Temperature Compensation On-chip (0C to +85C) On-chip, 0 °C to +85 °C
Kemasan M-PAC-5 (5-SMD module with top port) 5-SMD M-PAK module, top port
Pressure Port Top port, 0.12 in (2.97 mm) tube —
Jenis Pemasangan Surface Mount Surface Mount (SMD Gull-Wing leads)
Media Compatibility Dry, non-corrosive gases only —
Status RoHS [DATA_NEEDED: RoHS status from datasheet] Compliant
Lead-Free [DATA_NEEDED: lead-free status] —
Full-Scale Span — 0 mV to 40 mV at 10 V excitation
Linearity — ±0.25% (P2 grade)
Tegangan Pemberi Arus — 10 V typical (sensor excitation)
Suhu Operasi — 0 °C to +85 °C (compensated range)
Storage Temperature — [DATA_NEEDED: storage temperature]
Port Type — Male barbed tube, top-side, 0.12" (2.97 mm)
Technology — Piezoresistive silicon MEMS, single-element
Bridge Resistance — [DATA_NEEDED: input/output bridge resistance]

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