MPXV2102GP vs MPX2102GP Vergleich
Detaillierter Direktvergleich von MPXV2102GP von NXP Semiconductors und MPX2102GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXV2102GP - 100 kPa Gage Pressure Sensor | NXP
MPXV2102GP ⚠ Letzte Bestellmöglichkeit
Spezifikationsvergleich
| Parameter | MPXV2102GP | MPX2102GP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,60 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Supply Voltage (Excitation) | 10 V DC typical | — |
| Full-Scale Output (Typical) | 40 mV at 10 V | — |
| Sensitivity (Typical) | 0.4 mV/kPa | — |
| Offset (Trimmed) | ±1 mV (after laser trim) | — |
| Linearity | ±0.25% of span (typ) | 1.0 % maximum |
| Betriebstemperatur | -40 °C to +125 °C | 0 C to +85 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | [DATA_NEEDED: storage temperature range] |
| Input Resistance (Bridge) | 400 Ω typical | — |
| Output Resistance (Bridge) | [DATA_NEEDED: output resistance] | — |
| Response Time | [DATA_NEEDED: response time] | — |
| Gehäuse / Bauform | 8-SMD, Gull Wing, Side Port (SOP 8, case 1735) | — |
| Port Size | 0.13" (3.17 mm) Tube | — |
| Montageart | Surface Mount | Through-Hole SIP |
| RoHS-Status | Compliant | Compliant |
| Technology | Piezoresistive (silicon strain gauge Wheatstone bridge) | — |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Ausgangsspannungsbereich | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Gehäuse | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |