MPXV2102GP vs MPX2102GP Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPXV2102GP tarafından NXP Semiconductors ve MPX2102GP tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MPXV2102GP | MPX2102GP |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Son Alış Zamanı | Aktif |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Supply Voltage (Excitation) | 10 V DC typical | — |
| Full-Scale Output (Typical) | 40 mV at 10 V | — |
| Sensitivity (Typical) | 0.4 mV/kPa | — |
| Offset (Trimmed) | ±1 mV (after laser trim) | — |
| Linearity | ±0.25% of span (typ) | 1.0 % maximum |
| İşletim Sıcaklığı | -40 °C to +125 °C | 0 C to +85 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | [DATA_NEEDED: storage temperature range] |
| Input Resistance (Bridge) | 400 Ω typical | — |
| Output Resistance (Bridge) | [DATA_NEEDED: output resistance] | — |
| Response Time | [DATA_NEEDED: response time] | — |
| Paket / Kas | 8-SMD, Gull Wing, Side Port (SOP 8, case 1735) | — |
| Port Size | 0.13" (3.17 mm) Tube | — |
| Montaj Türü | Surface Mount | Through-Hole SIP |
| RoHS Durumu | Compliant | Compliant |
| Technology | Piezoresistive (silicon strain gauge Wheatstone bridge) | — |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Çıkış Gerilimi Aralığı | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Paket | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |