MPXV2102GP vs MPX2102GP Comparación

Comparación detallada lado a lado de MPXV2102GP por NXP Semiconductors y MPX2102GP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MPXV2102GP MPXV2102GP - 100 kPa Gage Pressure Sensor | NXP

MPXV2102GP - 100 kPa Gage Pressure Sensor | NXP

MPXV2102GP ⚠ Última compra
NXP Semiconductors
MPX2102GP MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP - 100kPa Vented Gauge Pressure Sensor | NXP

MPX2102GP ✓ Activo

Comparación de especificaciones

Parámetro MPXV2102GP MPX2102GP
Marca NXP Semiconductors NXP Semiconductors
Categoría Pressure Sensors Pressure Sensors
Estado del ciclo de vida Última compra Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $5,60 $5,40
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 kPa to 100 kPa (0 to 14.5 PSI) 0 kPa to 100 kPa (0 PSI to 14.5 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] [DATA_NEEDED: maximum overpressure rating]
Supply Voltage (Excitation) 10 V DC typical —
Full-Scale Output (Typical) 40 mV at 10 V —
Sensitivity (Typical) 0.4 mV/kPa —
Offset (Trimmed) ±1 mV (after laser trim) —
Linearity ±0.25% of span (typ) 1.0 % maximum
Temperatura de funcionamiento -40 °C to +125 °C 0 C to +85 C
Storage Temperature [DATA_NEEDED: storage temperature] [DATA_NEEDED: storage temperature range]
Input Resistance (Bridge) 400 Ω typical —
Output Resistance (Bridge) [DATA_NEEDED: output resistance] —
Response Time [DATA_NEEDED: response time] —
Encapsulado / Carcasa 8-SMD, Gull Wing, Side Port (SOP 8, case 1735) —
Port Size 0.13" (3.17 mm) Tube —
Tipo de montaje Surface Mount Through-Hole SIP
Estado RoHS Compliant Compliant
Technology Piezoresistive (silicon strain gauge Wheatstone bridge) —
Full-Scale Output (VoutFS) — 40 mV at 10 V excitation
Rango de tensión de salida — 0 mV to 40 mV
Excitation Voltage — 10 V typical (DC)
Sensitivity — 0.4 mV/kPa nominal
Pressure Port — Male 0.19 in (4.93 mm) tube
Temperature Compensation Range — 0 C to +85 C (on-chip)
Encapsulado — 4-SIP Module (Unibody GP)
Sensor Technology — Silicon piezoresistive, monolithic diaphragm
Offset (null) — 0 mV to 1 mV typical

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