MPXV2102GP vs MPX2102GP Сравнение
Подробное сравнение бок о бок MPXV2102GP от NXP Semiconductors и MPX2102GP от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MPXV2102GP | MPX2102GP |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Последняя закупка | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,60 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | [DATA_NEEDED: maximum overpressure rating] |
| Supply Voltage (Excitation) | 10 V DC typical | — |
| Full-Scale Output (Typical) | 40 mV at 10 V | — |
| Sensitivity (Typical) | 0.4 mV/kPa | — |
| Offset (Trimmed) | ±1 mV (after laser trim) | — |
| Linearity | ±0.25% of span (typ) | 1.0 % maximum |
| Рабочая температура | -40 °C to +125 °C | 0 C to +85 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | [DATA_NEEDED: storage temperature range] |
| Input Resistance (Bridge) | 400 Ω typical | — |
| Output Resistance (Bridge) | [DATA_NEEDED: output resistance] | — |
| Response Time | [DATA_NEEDED: response time] | — |
| Корпус / Типоразмер | 8-SMD, Gull Wing, Side Port (SOP 8, case 1735) | — |
| Port Size | 0.13" (3.17 mm) Tube | — |
| Тип монтажа | Surface Mount | Through-Hole SIP |
| Статус RoHS | Compliant | Compliant |
| Technology | Piezoresistive (silicon strain gauge Wheatstone bridge) | — |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Диапазон выходного напряжения | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Корпус | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |