MPXV5100DP vs MPXV5004DP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPXV5100DP sa pamamagitan ng NXP Semiconductors at MPXV5004DP sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MPXV5100DP - 100kPa Differential Pressure Sensor, 5V, 8-SOP | NXP
MPXV5100DP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPXV5100DP | MPXV5004DP |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | Pressure Sensors | Pressure Sensors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Pressure Type | Differential | Differential (Dual Port, Same Side) |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Type ng Output | Analog, Ratiometric Voltage | Analog, Ratiometric to VCC |
| Hanay ng Output Volte | 0.2 V to 4.7 V | 1.0 V to 4.9 V at 5 V supply |
| Volte ng Pagbibigay | 4.75 V to 5.25 V (nominal 5 V) | 4.75 V to 5.25 V (5 V typical) |
| Sensitivity | 45 mV/kPa (nominal) | — |
| Pressure Accuracy | +/- 5% (max, over compensated range) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Port Style | Dual horizontal ports, same side | — |
| Port Size | 0.13 inch (3.3 mm) tube | — |
| Packhaging | 8-BSOP (0.475 inch, 12.06 mm width), dual ports same side | 8-BSOP (CASE 1351-01), 12.06 mm width |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Sensor Technology | Piezoresistive (silicon MEMS) with on-chip signal conditioning | — |
| Pressure Range | — | 0 kPa to 3.92 kPa (0 to 0.57 PSI) |
| Port Type | — | Male Tube, 3.3 mm O.D., Dual Same-Side |
| Kuru-kuryente ng Pagbibigay | — | 10 mA typical |
| Accuracy | — | ±1.5% Vfss typical (after auto-zero) |
| Storage Temperature | — | -30°C to +100°C |
| Response Time | — | 1 ms typical |
| Sensing Technology | — | Piezoresistive (MEMS strain gauge) |
| Signal Conditioning | — | On-chip amplified and calibrated |