MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
Teilenummer: MRF6S23140HR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $87.5 | $875,00 |
| 100 | $78 | $7.800,00 |
| 500 | $70 | $35.000,00 |
| 1.000 | $65 | $65.000,00 |
MRF6S23140HR3 Übersicht
What is an RF power LDMOS? RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors are a specialized class of power MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. LDMOS sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> active RF component. Compared to bipolar RF transistors, LDMOS offers superior gain linearity, easier broadband matching, and better thermal stability, which has made it the dominant technology for cellular base-station power blocks since the late 1990s.
The MRF6S23140HR3 operates from a 28 V DC rail, exhibits typical quiescent drain current around 1.3 A in test conditions, and provides a rugged load-mismatch tolerance suitable for Doherty and conventional class-AB amplifier topologies. Its thermal performance is enabled by a ceramic NI-880H-2L flange package with low thermal resistance, allowing direct bolt-down mounting to a heatsink or cold-plate. The device is internally input-matched for the 2.3-2.4 GHz WiMAX/LTE band, simplifying PCB layout.
This part is widely specified for 2.3-2.4 GHz WiMAX, LTE Band 38, and 2 x W-CDMA macro-cell base-station power amplifiers. The 28 W average output is appropriate for driver stages of higher-power amplifiers and for small-cell or micro-cell final stages. Designers also deploy it in pulsed-RF and tactical-radio power blocks thanks to its high peak-to-average ratio handling.
When designing with this device, attention to drain-bias sequencing, gate-bias stability, and harmonic-filtering is essential. Always consult the manufacturer datasheet for application-circuit reference designs, load-pull data, and recommended PCB stack-up before finalizing the layout.
This page synthesizes distributor pricing, drop-in alternative listings, and practical RF design notes not consolidated in the manufacturer datasheet, supporting faster part selection and BOM validation.
Drop-in-Alternativen für MRF6S23140HR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S23140HR3 (gleiche Bauform und Footprint) – abweichend in Package / Case, Transistor Type, Mounting Type, Operating Frequency Range, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S23140HSR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S27085HR5
✅ Drop-In✓ Auf Lager
$21.85 / Stück
Datenblatt ansehen →MRF6S27050HR5
✅ Drop-In✓ Auf Lager
$17.5 / Stück
Datenblatt ansehen →MRF6S23140HR3 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral N-Channel RF Power MOSFET |
| Drain-Source Voltage (Rated) | 68 V |
| Operating Drain Voltage (Typical) | 28 V |
| Test Quiescent Drain Current | 1.3 A |
| Operating Frequency Range | 2300 MHz to 2400 MHz |
| Test Frequency | 2.39 GHz |
| Output Power (Average, 2 x W-CDMA) | 28 W |
| Power Gain | 15.2 dB |
| Gehäuse / Bauform | NI-880H-2L (CASE 465B-03, STYLE 1) |
| Montageart | Chassis / Flange Mount |
| Configuration | Single, push-pull capable |
| Input Matching | Internally matched (per datasheet) |
MRF6S23140HR3 Pin-Konfiguration
| Pin 1 | RF Input / Gate — RF signal input and gate bias (internally matched) |
| Pin 2 | Drain — 28 V DC drain supply |
| Pin 3 | RF Output — RF signal output (matched network at drain) |
| Pin Flange | Source / Thermal Ground — DC source and primary thermal path; must be bolted to heatsink |
Typische Anwendungen
MRF6S23140HR3 ist geeignet für 6 Anwendungs: 2.3-2.4 GHz LTE / WiMAX Base Station Final Stage, Doherty Power Amplifier Driver Stage, Tactical / Pulsed-RF Communication Power Block, Industrial / Scientific 2.4 GHz RF Energy, Repeater / Small-Cell Front-End Amplifier, RF Test & Measurement Power Amplifier Module.
2.3-2.4 GHz LTE / WiMAX Base Station Final Stage
The MRF6S23140HR3's 2300-2400 MHz operating band and 28 W average output at 15.2 dB gain map directly onto 2.3-2.4 GHz TDD-LTE Band 40 and legacy WiMAX macro-cell final stages. Its 28 V bias simplifies integration with standard telecom -48 V to 28 V converter rails. The internally input-matched NI-880H-2L ceramic package reduces external matching complexity, and 28 W average is appropriate for small-cell or micro-cell final stages where footprint and thermal dissipation dominate the design. Designers should pair the device with harmonic filters meeting ETSI or 3GPP spectral mask requirements. The load-mismatch ruggedness characteristic of LDMOS helps survive antenna VSWR events common in field deployments.
Empfohlen
Doherty Power Amplifier Driver Stage
The MRF6S23140HR3 serves as an excellent carrier or peaking device in 2.3-2.4 GHz Doherty amplifier architectures where 15.2 dB gain and 28 W average output balance linearity and efficiency. Its 28 V bias point and load-mismatch tolerance support the high peak-to-average ratios typical of OFDMA signals. Placed between the predriver LDMOS and the high-power final stage, it delivers clean gain with predictable phase behavior across the 100 MHz instantaneous bandwidth. Designers should reference NXP's Doherty application notes and validate load-pull data at the actual operating PAPR. Thermal mounting via the ceramic flange to a copper spreader is essential for sustained CW or high-duty-cycle operation.
Empfohlen
Tactical / Pulsed-RF Communication Power Block
Military and tactical radio systems operating in the 2.3-2.4 GHz band can leverage the MRF6S23140HR3 for pulsed-RF power amplification where high peak power, controlled duty cycle, and rugged thermal performance are essential. The NI-880H-2L ceramic flange package provides low thermal resistance and mechanical durability for harsh-environment deployment. Designers should evaluate peak power handling, duty-cycle derating, and bias sequencing per NXP's pulsed-RF guidelines. The 15.2 dB gain simplifies driver-chain design in compact manpack or vehicular radio platforms.
Empfohlen
Industrial / Scientific 2.4 GHz RF Energy
The 2.3-2.4 GHz ISM-adjacent band overlaps with emerging industrial RF-energy applications such as plasma generation, drying, and material processing. The MRF6S23140HR3's 28 W average rating with 28 V bias provides a solid building block for continuous or pulsed industrial RF sources. The ceramic package sustains the elevated thermal loads typical of CW industrial duty cycles when bolted to a properly sized heatsink. Designers should add harmonic filtering to comply with regional industrial-scientific emissions regulations and verify long-term junction temperature stays within datasheet limits.
Empfohlen
Repeater / Small-Cell Front-End Amplifier
Wireless repeaters and outdoor small cells in the 2.3-2.4 GHz band can use the MRF6S23140HR3 as the final amplification stage where 28 W average output provides adequate coverage extension without the cost and complexity of higher-power devices. Its internal input matching simplifies board layout in compact small-cell enclosures, while the 15.2 dB gain chain-budget headroom supports cascaded filter and duplexer losses. Thermal design via flange mounting to the radio chassis is critical in sealed outdoor units. Designers should validate ACPR performance against operator-specific emissions masks.
Empfohlen
RF Test & Measurement Power Amplifier Module
Test and measurement integrators building 2.3-2.4 GHz power-amplifier modules for ATE, EMC test beds, or general-purpose lab use can deploy the MRF6S23140HR3 as the active device. Its 28 W average output with 15.2 dB gain and 28 V bias is well-matched to standard laboratory DC supplies and instrumentation amplifiers. The ceramic NI-880H-2L flange enables repeatable bench-mount thermal characterization and simplifies swappedevice qualification testing. Designers should include precision bias tees, directional couplers, and circulator protection to maximize measurement repeatability and device lifetime.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S23140HR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S23140HSR3 | MRF6S27085HR5 | MRF6S27050HR5 |
|---|---|---|---|---|
| Package | NI-880H-2L (CASE 465B-03, STYLE 1) | NI-880 alternate ceramic variant | NI-880 family | NI-880 family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2300-2400 MHz | 2300-2400 MHz | 2600-2700 MHz | 2600-2700 MHz |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Output Power (Average) | 28 W | 28 W | 85 W (different band) | 50 W (different band) |
| Technology | LDMOS, N-Channel | LDMOS, N-Channel | LDMOS, N-Channel | LDMOS, N-Channel |
| Mounting Type | Ceramic Flange (bolt-down) | Ceramic Flange | Ceramic Flange | Ceramic Flange |
Wichtigste Unterscheidungsmerkmale
- Optimized specifically for 2.3-2.4 GHz with internal input matching (vs. MRF6S27085HR5)
- Same electrical die across the MRF6S23140H family (vs. MRF6S23140HSR3)
- 28 W power class balances gain, efficiency, and thermal load (vs. MRF6S27050HR5)
Designhinweise
Estimated: at 28 W average output with 28 V drain and ~50% drain efficiency, the device dissipates roughly 28 W internally. The NI-880H-2L ceramic flange must be bolted to a heatsink or cold-plate with thermal compound; junction temperature must remain below the datasheet maximum (typically 200 C). For continuous CW operation, derate aggressively and confirm with the published thermal-resistance curve.
Use the NXP reference design stack-up: Rogers RO4003C or equivalent low-loss dielectric for the matching network, with the drain bias feed routed through a quarter-wave stub or bias tee. Keep the gate and drain traces short, enclose RF paths in a continuous ground moat, and place 100 pF and 10 nF decoupling directly at the drain lead. Solder the flange with a uniform thermal compound layer; torque to the datasheet-specified value to avoid ceramic cracking.
Do not exceed the 68 V drain-source absolute maximum even momentarily - inductive kickback from the drain choke can produce spikes well above the DC rail. Add a TVS clamp or RC snubber across the choke if the supply is hot-switched. Gate bias must be applied before drain bias; reversed sequencing risks parametric shift. Always verify quiescent current at the recommended gate voltage per device - LDMOS IDQ varies unit to unit.
Compliance-Informationen
Specific RoHS/REACH status not present in verified web data; consult NXP product page or PCN documents. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-grade IC.
