MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP
Teilenummer: MRF6S9045NR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $24.5 | $24,50 |
| 10 | $22.1 | $221,00 |
| 100 | $19.8 | $1.980,00 |
| 500 | $17.95 | $8.975,00 |
| 1.000 | $16.4 | $16.400,00 |
MRF6S9045NR1 Übersicht
A lateral MOSFET (LDMOS) is a specialized RF power transistor architecture that places the drain on the top surface of a thin epitaxial layer, enabling high breakdown voltage, high gain, and excellent thermal performance at RF frequencies. LDMOS sits in the broader hierarchy: power transistor -> RF power transistor -> LDMOS -> base-station PA building block. It dominates cellular base-station power amplifier final stages because of its high efficiency, broadband capability, and ability to survive severe VSWR mismatches.
Key features include 22.7 dB typical power gain, single-carrier N-CDMA ACPR performance optimized for linearity, and high ruggedness - the device tolerates infinite VSWR at rated supply voltage. Drain efficiency at 10 W Pout reaches approximately 33 percent at 880 MHz, and the device operates from a single 28 V rail typical of macro-cell base-station infrastructure. The TO-270-2 case provides low thermal resistance for reliable CW and pulsed operation.
Designed by Freescale Semiconductor (now NXP), the part traces to a well-documented RF LDMOS process node optimized for cellular infrastructure PA designers. The "N" suffix indicates transition to lead-free terminations, and the device is drop-in compatible with the earlier non-N suffix variant (MRF6S9045R1), enabling RoHS-conversion board retrofits without PCB layout changes.
Typical applications include 880 MHz cellular base-station power amplifiers (single-carrier N-CDMA, GSM EDGE, multi-carrier), RFID and industrial scientific RF power stages, public-safety UHF band linear amplifiers, and broadband general-purpose RF amplification up to 1000 MHz.
When designing with the MRF6S9045NR1, ensure the 50 ohm input and output matching networks present the datasheet-recommended load impedances at the fundamental and second harmonic to achieve the rated gain and efficiency. Proper bias sequencing (gate voltage applied before drain voltage) is mandatory to avoid device damage.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MRF6S9045NR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S9045NR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Transistor Type, Application, Manufacturer, Operating Frequency.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFE6S9045NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S9045NBR1
✅ Drop-In✓ Auf Lager
$12.1 / Stück
Datenblatt ansehen →MRF6S9045R1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S9045MR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF9030MBR1
✅ Drop-In✓ Auf Lager
$25.8 / Stück
Datenblatt ansehen →MRF6S9045NR1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral MOSFET (RF Power) |
| Drain-Source Voltage (VDS) Rated | 68 V |
| Operating Drain Voltage (VDD) | 28 V (typical) |
| Continuous Drain Current (ID) | 10 uA (rated) |
| Quiescent Current (IDQ) | 350 mA |
| Output Power (Pout) | 10 W Avg. |
| Operating Frequency | 880 MHz (up to 1000 MHz) |
| Power Gain | 22.7 dB |
| Gehäuse / Bauform | TO-270-2 (Case 1265-09, Style 1) |
| Montageart | Surface Mount |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | Infinite VSWR at rated VDD |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA |
| Manufacturer | Freescale Semiconductor (acquired by NXP) |
MRF6S9045NR1 Pin-Konfiguration
| Pin 1 | Gate (Input) — RF input / gate bias, requires DC blocking capacitor and VGS bias network |
| Pin 2 | Drain (Output) — RF output / drain supply (VDD=28V), requires DC blocking capacitor and RF choke to VDD |
| Pin Flange | Source / Ground — Package backside flange is the source and primary thermal path; must be soldered to PCB ground plane with adequate copper area |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
MRF6S9045NR1 ist geeignet für 6 Anwendungs: 880 MHz Cellular Base Station Power Amplifier, UHF RFID Reader Power Amplifier, Public-Safety UHF Band Linear Amplifier, Broadband Industrial/Scientific RF Power Source, Multi-Carrier GSM/EDGE Base Station PA Driver, ISM Band 900 MHz RF Power Amplifier.
880 MHz Cellular Base Station Power Amplifier
The MRF6S9045NR1 is engineered specifically for 880 MHz cellular base-station final-stage PA power amplifier designs, particularly for single-carrier N-CDMA infrastructure. Its 22.7 dB gain allows direct drive from milliwatt-level pre-driver chains to a full 10 W average output without intermediate stages, simplifying the PA lineup. Operating from a single 28 V VDD rail typical of macro-cell BTS cabinets, it eliminates the need for additional bias rails. Per the NXP datasheet, the device delivers the linearity required for N-CDMA adjacent-channel leakage while maintaining efficiency suitable for fan-cooled enclosures.
Empfohlen
UHF RFID Reader Power Amplifier
The 860-960 MHz UHF RFID reader band falls within the MRF6S9045NR1's characterized broadband performance range. With 22.7 dB typical gain and 10 W output capability, the device can drive reader antennas for long-read-range applications such as portal readers, conveyor-belt interrogators, and toll-collection systems. Designers commonly bias the part at lower IDQ (100-200 mA) for Class AB linearity required for dense-reader-mode multi-tag scenarios. The TO-270-2 overmolded package withstands the continuous-duty thermal load of RFID reader applications.
Empfohlen
Public-Safety UHF Band Linear Amplifier
Land-mobile-radio and public-safety systems operating in the UHF band near cellular frequencies benefit from the MRF6S9045NR1's broadband response up to 1000 MHz. The 22.7 dB gain and 10 W average output are well matched to repeater-station final stages that drive combining networks feeding tower-top antennas. Per the NXP datasheet, infinite VSWR tolerance at rated 28 V VDD makes the device rugged against antenna disconnection events - critical for tower-mounted infrastructure where lightning-induced load transients occur. The 28 V rail aligns with standard BTS power-plant voltages.
Empfohlen
Broadband Industrial/Scientific RF Power Source
The MRF6S9045NR1's characterization up to 1000 MHz makes it suitable for general-purpose broadband RF power sources in industrial heating, plasma generation, and scientific instrumentation. Its high gain reduces driver-stage complexity and its broadband response permits wide tuning ranges when paired with appropriate matching networks. The 28 V rail and 10 W output suit dielectric-heating probes, RF plasma drivers, and laboratory RF amplifiers. Per NXP datasheet the device maintains gain flatness across its operating band when properly matched.
Empfohlen
Multi-Carrier GSM/EDGE Base Station PA Driver
For multi-carrier GSM and EDGE base-station applications near 900 MHz, the MRF6S9045NR1 can serve as either a final-stage low-power PA or as a driver for cascaded higher-power stages. Its linearity supports the multi-carrier signal envelopes typical of carrier-combined BTS designs. Per the NXP datasheet, the part's gain flatness across the 880-915 MHz band allows broadband matching without per-channel tuning. Designers should consult the datasheet ACPR data to ensure linearity margin meets their carrier-spacing requirements.
Empfohlen
ISM Band 900 MHz RF Power Amplifier
The 902-928 MHz ISM band overlaps the MRF6S9045NR1's characterized operating range, making the device attractive for license-free industrial, scientific, and medical RF power applications. Wireless data links, remote-control systems, and proprietary telemetry can leverage the 10 W output and high gain. Per the NXP datasheet, the 28 V supply and TO-270-2 thermal package support continuous-duty operation in ISM-band transmitters. Regulatory compliance remains the designer's responsibility, but the part's broadband capability simplifies ISM-band amplifier implementations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S9045NR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFE6S9045NR1 | MRF6S9045NBR1 | MRF6S9045R1 | MRF6S9045MR1 | MRF9030MBR1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270-2 (Case 1265-09) | TO-270-2 - same | TO-270-2 - same | TO-270-2 - same | TO-270-2 - same | TO-270-2 - same |
| Operating Frequency | 880 MHz (typ), up to 1000 MHz | 880 MHz (typ), up to 1000 MHz | 880 MHz (typ), up to 1000 MHz | 880 MHz (typ), up to 1000 MHz | 880 MHz (typ), up to 1000 MHz | 945 MHz (typ), up to 1000 MHz |
| Output Power | 10 W Avg. | 10 W Avg. | 10 W Avg. | 10 W Avg. | 10 W Avg. | 30 W pulsed / 7.5 W CW |
| Drain Voltage VDD | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Lead-Free / RoHS | Yes (N suffix) | Yes | Yes | No (legacy SnPb) | No (legacy) | Yes |
| Datasheet Status | Active (NXP) | Active (latest revision) | Active | Legacy (recommended use NR1) | Obsolete (replaced by NR1) | Active |
Wichtigste Unterscheidungsmerkmale
- Highest gain 880 MHz LDMOS in TO-270-2 footprint (vs. MRF9030MBR1)
- Latest NXP revision drop-in replacement available (vs. MRF6S9045MR1)
- Lead-free RoHS compliance with form-fit-function continuity (vs. MRF6S9045R1)
- Infinite VSWR ruggedness at rated 28 V VDD (vs. MRF9030MBR1)
Designhinweise
Estimated: For the TO-270-2 flange-grounded package, the PCB must provide a continuous ground-plane copper pour under the device flange extending at least 10 mm beyond each edge to meet the 28 V VDD x 350 mA IDQ dissipation budget of approximately 9.8 W. The RF input and output traces should be 50 ohm microstrip on the chosen substrate (typically Rogers RO4350B for cellular PA designs) with DC-blocking capacitors placed within 2 mm of the gate and drain leads. Source-lead grounding is achieved through the flange solder footprint, not through PCB lead connections.
Per the NXP datasheet, bias sequencing is mandatory: apply VGS (negative gate voltage to pinch off) before applying VDD, and reverse the sequence during shutdown. Failing to sequence biases can cause the device to draw uncontrolled current during turn-on and may permanently damage the LDMOS die. Designers should use a dedicated bias controller IC or a sequencing circuit that interlocks VGS enable with VDD presence. Also, ensure the gate bias supply can sink current during power-down to prevent slow discharge through the gate network.
Per the NXP datasheet and standard cellular PA layout practice, the input and output matching networks should be designed for the datasheet-recommended fundamental and second-harmonic load impedances to achieve the rated 22.7 dB gain and ~33% drain efficiency. Place the drain RF choke as close as possible to the drain lead to minimize parasitic loop area, and use a low-ESR (effective ESR less than 0.1 ohm at 880 MHz) decoupling capacitor bank on the VDD rail within 5 mm of the RF choke. Avoid routing any digital or low-level signal traces near the PA output matching network to prevent feedback coupling.
Estimated: At continuous 10 W RF output with approximately 33% drain efficiency, the device dissipates about 20 W of DC power as heat. With the TO-270-2 thermal resistance of approximately 0.6 C/W (junction-to-flange) and assuming a heat sink thermal resistance of 1.0 C/W to ambient, the junction temperature rise above ambient is approximately 32 C. Designers must attach the device to an adequate heat sink with thermal compound for continuous-duty applications. For pulsed N-CDMA operation the average dissipation is lower but thermal analysis must still account for peak junction temperature during the pulse.
Compliance-Informationen
N suffix denotes lead-free terminations per NXP datasheet. RoHS compliant. AEC-Q100 not applicable (RF power transistor, not automotive-qualified IC). Halogen-free status not explicitly stated in verified data.
