MRF6V2150NBR5 vs SRF7S27125HSR3 Vergleich
Detaillierter Direktvergleich von MRF6V2150NBR5 von NXP Semiconductors und SRF7S27125HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6V2150NBR5 | SRF7S27125HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $54,20 | $99,80 |
| Transistortyp | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Drain-Source Voltage (VDS) | 110 V | 27 V (typical operating) |
| Drain-Source Voltage (VDSS, max) | 110 V | — |
| Operating Drain Voltage (VDD) | 50 V | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID max] | — |
| Output Power (POUT, CW) | 150 W | — |
| Operating Frequency Range | 10 MHz to 450 MHz | — |
| Power Gain (Gps) | 25 dB | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Gehäuse | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) | NI-880S ceramic flange-mount |
| Montageart | Chassis/Surface Mount (bolt-down with ceramic insulator) | Flange-mount, bolt-down (2 tabs) |
| Configuration | Single-ended, unmatched | — |
| Mode of Operation | CW (continuous wave), large-signal | CW (continuous wave) capable |
| MSL-Level | Not applicable (hermetic ceramic package) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Betriebstemperaturbereich | -40 C to +150 C (TJ max 200 C) | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Product Type | — | RF Power LDMOSFET |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Output Power (CW) | — | 125 W |
| Frequency Band | — | UHF (470 MHz to 860 MHz typical) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Polarity | — | N-Channel |
| Application Domain | — | UHF broadcast transmitter PA, industrial RF |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Wärmewiderstand | — | [DATA_NEEDED: RthJC value] |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Input Matching | — | Internal, broadband |
| ESD Protection | — | Integrated |
| Gain (typical) | — | [DATA_NEEDED: gain at operating frequency] |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency] |