MRF6V2150NBR5 vs SRF7S27125HSR3 Comparación
Comparación detallada lado a lado de MRF6V2150NBR5 por NXP Semiconductors y SRF7S27125HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6V2150NBR5 | SRF7S27125HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $54,20 | $99,80 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Drain-Source Voltage (VDS) | 110 V | 27 V (typical operating) |
| Drain-Source Voltage (VDSS, max) | 110 V | — |
| Operating Drain Voltage (VDD) | 50 V | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID max] | — |
| Output Power (POUT, CW) | 150 W | — |
| Operating Frequency Range | 10 MHz to 450 MHz | — |
| Power Gain (Gps) | 25 dB | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Encapsulado | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) | NI-880S ceramic flange-mount |
| Tipo de montaje | Chassis/Surface Mount (bolt-down with ceramic insulator) | Flange-mount, bolt-down (2 tabs) |
| Configuration | Single-ended, unmatched | — |
| Mode of Operation | CW (continuous wave), large-signal | CW (continuous wave) capable |
| Nivel MSL | Not applicable (hermetic ceramic package) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C (TJ max 200 C) | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Product Type | — | RF Power LDMOSFET |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Output Power (CW) | — | 125 W |
| Frequency Band | — | UHF (470 MHz to 860 MHz typical) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Polarity | — | N-Channel |
| Application Domain | — | UHF broadcast transmitter PA, industrial RF |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Resistencia térmica | — | [DATA_NEEDED: RthJC value] |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Input Matching | — | Internal, broadband |
| ESD Protection | — | Integrated |
| Gain (typical) | — | [DATA_NEEDED: gain at operating frequency] |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency] |