MRF6V2150NBR5 vs SRF7S27125HSR3 Comparaison
Comparaison détaillée côte à côte de MRF6V2150NBR5 par NXP Semiconductors et SRF7S27125HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF6V2150NBR5 | SRF7S27125HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $54,20 | $99,80 |
| Type de transistor | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Drain-Source Voltage (VDS) | 110 V | 27 V (typical operating) |
| Drain-Source Voltage (VDSS, max) | 110 V | — |
| Operating Drain Voltage (VDD) | 50 V | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID max] | — |
| Output Power (POUT, CW) | 150 W | — |
| Operating Frequency Range | 10 MHz to 450 MHz | — |
| Power Gain (Gps) | 25 dB | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Boîtier | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) | NI-880S ceramic flange-mount |
| Type de montage | Chassis/Surface Mount (bolt-down with ceramic insulator) | Flange-mount, bolt-down (2 tabs) |
| Configuration | Single-ended, unmatched | — |
| Mode of Operation | CW (continuous wave), large-signal | CW (continuous wave) capable |
| Niveau MSL | Not applicable (hermetic ceramic package) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Plage de température de fonctionnement | -40 C to +150 C (TJ max 200 C) | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Product Type | — | RF Power LDMOSFET |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Output Power (CW) | — | 125 W |
| Frequency Band | — | UHF (470 MHz to 860 MHz typical) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Polarity | — | N-Channel |
| Application Domain | — | UHF broadcast transmitter PA, industrial RF |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Résistance thermique | — | [DATA_NEEDED: RthJC value] |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Input Matching | — | Internal, broadband |
| ESD Protection | — | Integrated |
| Gain (typical) | — | [DATA_NEEDED: gain at operating frequency] |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency] |