MRF6V2150NBR5 vs SRF7S27125HSR3 对比

详细并排对比 MRF6V2150NBR5 出自 NXP Semiconductors 和 SRF7S27125HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6V2150NBR5 MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP

MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP

MRF6V2150NBR5 ✓ 量产中
NXP Semiconductors
SRF7S27125HSR3 SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors

SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors

SRF7S27125HSR3 ✓ 量产中

规格对比

参数 MRF6V2150NBR5 SRF7S27125HSR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $54.20 $99.80
晶体管类型 N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Drain-Source Voltage (VDS) 110 V 27 V (typical operating)
Drain-Source Voltage (VDSS, max) 110 V —
Operating Drain Voltage (VDD) 50 V —
Continuous Drain Current (ID) [DATA_NEEDED: ID max] —
Output Power (POUT, CW) 150 W —
Operating Frequency Range 10 MHz to 450 MHz —
Power Gain (Gps) 25 dB —
Drain Efficiency (typ) [DATA_NEEDED: drain efficiency %] —
封装 TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) NI-880S ceramic flange-mount
安装类型 Chassis/Surface Mount (bolt-down with ceramic insulator) Flange-mount, bolt-down (2 tabs)
Configuration Single-ended, unmatched —
Mode of Operation CW (continuous wave), large-signal CW (continuous wave) capable
MSL 等级 Not applicable (hermetic ceramic package) —
RoHS 状态 [DATA_NEEDED: RoHS status] —
工作温度范围 -40 C to +150 C (TJ max 200 C) —
Lead-Free [DATA_NEEDED: lead-free status] —
Product Type — RF Power LDMOSFET
Manufacturer — NXP Semiconductors (formerly Freescale)
Output Power (CW) — 125 W
Frequency Band — UHF (470 MHz to 860 MHz typical)
Technology — LDMOS (Laterally Diffused MOSFET)
Polarity — N-Channel
Application Domain — UHF broadcast transmitter PA, industrial RF
工作温度 — [DATA_NEEDED: operating temperature range]
Storage Temperature — [DATA_NEEDED: storage temperature range]
热阻 — [DATA_NEEDED: RthJC value]
Lead-Free / RoHS — [DATA_NEEDED: RoHS compliance status]
Input Matching — Internal, broadband
ESD Protection — Integrated
Gain (typical) — [DATA_NEEDED: gain at operating frequency]
Drain Efficiency — [DATA_NEEDED: typical drain efficiency]

数据手册与资源

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