MRF7S18170HR3 vs MRF7S19080HR3 Vergleich
Detaillierter Direktvergleich von MRF7S18170HR3 von NXP Semiconductors und MRF7S19080HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ AktivNXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF7S18170HR3 | MRF7S19080HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $70,00 | $36,20 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | HV7 RF Power LDMOS |
| Configuration | Single, Common Source | Single, Push-Pull |
| Drain-Source Voltage (Vds) Rated | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current (Idq) | 1.4 A | — |
| Output Power (Pout) | 50 W | — |
| Power Gain | 17.5 dB at 1.81 GHz | — |
| Operating Frequency | 1.805 GHz to 1.88 GHz | — |
| Gehäuse | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) | NI-780H-2L (ceramic, flanged) |
| Montageart | Surface Mount / Flange Mount | Surface Mount / Screw Mount |
| Application Class | Class AB, Class C amplifier | — |
| Target Application | CDMA and multicarrier base station amplifiers | — |
| Lead Free Status | Yes (per datasheet) | Lead Free |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz (1987.5 MHz) |
| Drain-Source Voltage (Vdss) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 750 mA |
| Output Power (Pout, Avg.) | — | 24 W (W-CDMA) |
| Power Gain (Gp) | — | 18 dB |
| Drain Efficiency | — | 32 % at 24 W Avg. |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Device Output Signal PAR | — | 6.2 dB @ 0.01 % CCDF |