MRF7S18170HR3 vs MRF7S19080HR3 Comparación
Comparación detallada lado a lado de MRF7S18170HR3 por NXP Semiconductors y MRF7S19080HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ ActivoNXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF7S18170HR3 | MRF7S19080HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $70,00 | $36,20 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | HV7 RF Power LDMOS |
| Configuration | Single, Common Source | Single, Push-Pull |
| Drain-Source Voltage (Vds) Rated | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current (Idq) | 1.4 A | — |
| Output Power (Pout) | 50 W | — |
| Power Gain | 17.5 dB at 1.81 GHz | — |
| Operating Frequency | 1.805 GHz to 1.88 GHz | — |
| Encapsulado | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) | NI-780H-2L (ceramic, flanged) |
| Tipo de montaje | Surface Mount / Flange Mount | Surface Mount / Screw Mount |
| Application Class | Class AB, Class C amplifier | — |
| Target Application | CDMA and multicarrier base station amplifiers | — |
| Lead Free Status | Yes (per datasheet) | Lead Free |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz (1987.5 MHz) |
| Drain-Source Voltage (Vdss) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 750 mA |
| Output Power (Pout, Avg.) | — | 24 W (W-CDMA) |
| Power Gain (Gp) | — | 18 dB |
| Drain Efficiency | — | 32 % at 24 W Avg. |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Device Output Signal PAR | — | 6.2 dB @ 0.01 % CCDF |