MRF7S18170HR3 vs MRF7S19080HR3 对比

详细并排对比 MRF7S18170HR3 出自 NXP Semiconductors 和 MRF7S19080HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF7S18170HR3 MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors

MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors

MRF7S18170HR3 ✓ 量产中
NXP Semiconductors
MRF7S19080HR3 MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station

MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station

MRF7S19080HR3 ✓ 量产中

规格对比

参数 MRF7S18170HR3 MRF7S19080HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $70.00 $36.20
晶体管类型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power Field Effect Transistor HV7 RF Power LDMOS
Configuration Single, Common Source Single, Push-Pull
Drain-Source Voltage (Vds) Rated 65 V —
Test Drain Voltage (Vdd) 28 V —
Test Drain Current (Idq) 1.4 A —
Output Power (Pout) 50 W —
Power Gain 17.5 dB at 1.81 GHz —
Operating Frequency 1.805 GHz to 1.88 GHz —
封装 NI-880H-2L (ceramic, metal-sealed cofired, flange mount) NI-780H-2L (ceramic, flanged)
安装类型 Surface Mount / Flange Mount Surface Mount / Screw Mount
Application Class Class AB, Class C amplifier —
Target Application CDMA and multicarrier base station amplifiers —
Lead Free Status Yes (per datasheet) Lead Free
RoHS 状态 [DATA_NEEDED: RoHS compliance status] Compliant
Frequency Range — 1930 MHz to 1990 MHz
Test Frequency — 1.99 GHz (1987.5 MHz)
Drain-Source Voltage (Vdss) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V
Quiescent Current (IDQ) — 750 mA
Output Power (Pout, Avg.) — 24 W (W-CDMA)
Power Gain (Gp) — 18 dB
Drain Efficiency — 32 % at 24 W Avg.
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz channel
Device Output Signal PAR — 6.2 dB @ 0.01 % CCDF

数据手册与资源

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