MRF7S18170HR3 vs MRF7S19080HR3 Comparaison
Comparaison détaillée côte à côte de MRF7S18170HR3 par NXP Semiconductors et MRF7S19080HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ ActifNXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF7S18170HR3 | MRF7S19080HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $70,00 | $36,20 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | HV7 RF Power LDMOS |
| Configuration | Single, Common Source | Single, Push-Pull |
| Drain-Source Voltage (Vds) Rated | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current (Idq) | 1.4 A | — |
| Output Power (Pout) | 50 W | — |
| Power Gain | 17.5 dB at 1.81 GHz | — |
| Operating Frequency | 1.805 GHz to 1.88 GHz | — |
| Boîtier | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) | NI-780H-2L (ceramic, flanged) |
| Type de montage | Surface Mount / Flange Mount | Surface Mount / Screw Mount |
| Application Class | Class AB, Class C amplifier | — |
| Target Application | CDMA and multicarrier base station amplifiers | — |
| Lead Free Status | Yes (per datasheet) | Lead Free |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz (1987.5 MHz) |
| Drain-Source Voltage (Vdss) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 750 mA |
| Output Power (Pout, Avg.) | — | 24 W (W-CDMA) |
| Power Gain (Gp) | — | 18 dB |
| Drain Efficiency | — | 32 % at 24 W Avg. |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Device Output Signal PAR | — | 6.2 dB @ 0.01 % CCDF |