MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
Teilenummer: MRF7S38040HSR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $25.2 | $252,00 |
| 100 | $21.75 | $2.175,00 |
| 500 | $18.4 | $9.200,00 |
| 1.000 | $15.95 | $15.950,00 |
MRF7S38040HSR3 Übersicht
An RF power MOSFET is a discrete transistor designed to deliver high RF output power at microwave frequencies while maintaining gain, efficiency, and ruggedness. RF power MOSFETs sit at the top of the RF amplifier chain - the final stage between the driver amplifier and the antenna in a base-station transmitter - and they belong to the broader RF semiconductor family that includes LDMOS, GaN HEMT, and bipolar power transistors. NXP's lateral N-channel LDMOS architecture offers an excellent balance of cost, broadband performance, and reliability for sub-6 GHz wireless infrastructure.
Key features include 14 dB typical power gain at 3.5 GHz, 8 W average output power in WiMAX OFDM service, integrated ESD protection, and a high-drain-current ceramic package with low thermal resistance for continuous-wave (CW) and pulsed-OFDM operation. The lateral MOSFET structure is fabricated on a high-resistivity silicon substrate, which minimizes parasitic capacitance and enables broadband matching across the 200 MHz WiMAX band without retuning.
Typical applications include WiMAX, WiBro, BWA, and OFDM multi-carrier Class AB and Class C amplifier stages in 3.5 GHz base stations, customer-premises equipment (CPE), and small-cell wireless backhaul. The part is also commonly used as a final-stage PA or driver for higher-power 3.5 GHz amplifier chains.
When designing with this part, ensure the bias network provides a stable 450 mA IDQ, use a 50-ohm microstrip matching network optimized for 3.5 GHz, and mount the NI-400S-2S package to a heatsink with proper RF and DC isolation. Always consult the NXP reference design for matching-network component values and bias sequencing.
This page synthesizes distributor stock, drop-in alternatives, and practical design guidance beyond the manufacturer datasheet, including same-package NXP variants and verified cross-brand equivalents where pin-compatibility is confirmed.
Drop-in-Alternativen für MRF7S38040HSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF7S38040HSR3 (gleiche Bauform und Footprint) – abweichend in Frequency Range, Mounting Type, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF7S38040HR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF7S38040HSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$15.95 / Stück
Datenblatt ansehen →MRF7S38010HSR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8P26080HSR3
✅ Drop-In✓ Auf Lager
$99.85 / Stück
Datenblatt ansehen →MRF7S38040HSR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Active |
| Transistortyp | N-Channel Lateral MOSFET |
| Frequency Range | 3.4 GHz to 3.6 GHz |
| Drain-Source Voltage (VDS) | 30 V |
| Quiescent Drain Current (IDQ) | 450 mA |
| Output Power (Pout) | 8 W average (WiMAX OFDM) |
| Power Gain (Gp) | 14 dB typical |
| Gehäuse / Bauform | NI-400S-2S (ceramic, surface-mount) |
| Montageart | Surface Mount (tape and reel) |
| Application | WiMAX, WiBro, BWA, OFDM base-station amplifiers |
| Configuration | Single N-channel MOSFET |
| Operating Mode | Class AB / Class C amplifier |
| Datasheet Document | NXP datasheet MRF7S38040H.pdf (linked above) |
MRF7S38040HSR3 Pin-Konfiguration
| Pin 1 | GATE — RF input gate bias and RF signal input |
| Pin 2 | DRAIN — RF output / DC drain supply (30 V VDD) |
| Pin 3 | SOURCE — Source (ground reference and thermal pad) |
DC Sicherer Arbeitsbereich (estimated from datasheet abs max)
Typische Anwendungen
MRF7S38040HSR3 ist geeignet für 6 Anwendungs: 3.5 GHz WiMAX Base-Station Final-Stage PA, WiBro / BWA Multi-Carrier OFDM Amplifier, 3.5 GHz Customer-Premises Equipment (CPE) PA, Driver Stage for Higher-Power 3.5 GHz Amplifiers, Fixed Wireless Access (FWA) 3.5 GHz Transmitter, Industrial / Scientific 3.5 GHz RF Power Source.
3.5 GHz WiMAX Base-Station Final-Stage PA
The MRF7S38040HSR3 is purpose-built for 3400-3600 MHz WiMAX base-station final-stage amplification. Its 14 dB typical gain at 3.5 GHz and 8 W average OFDM output power, combined with 30 V VDD operation per the NXP datasheet, make it a direct fit for Class AB linear amplification where EVM and ACPR targets must be met for 64-QAM and 16-QAM WiMAX profiles. The lateral N-channel LDMOS architecture provides the ruggedness needed for high-VSWR antenna loads typical of outdoor base-station deployments. The NI-400S-2S ceramic package has low thermal resistance, enabling continuous-duty operation at the rated 8 W average with proper PCB copper heat-spreading and an external heatsink.
Empfohlen
WiBro / BWA Multi-Carrier OFDM Amplifier
WiBro (Korean mobile WiMAX) and BWA (broadband wireless access) profiles operate in the same 3.4-3.6 GHz band as standard WiMAX and share OFDM multi-carrier modulation. The MRF7S38040HSR3, with 8 W average Pout and 14 dB gain per the NXP datasheet, is rated for these multi-carrier OFDM waveforms and can deliver clean amplification of densely populated subcarrier allocations when biased at 450 mA IDQ. The lateral MOSFET structure handles the high peak-to-average ratio (PAR) of OFDM without compression, supporting Class AB linear operation. Designers targeting 4G-like WiBro deployments can use this part with confidence in the standard test conditions documented in the datasheet.
Empfohlen
3.5 GHz Customer-Premises Equipment (CPE) PA
Outdoor and indoor WiMAX CPE radios require a final-stage amplifier that delivers 8 W average output with low EVM and modest heat dissipation. The MRF7S38040HSR3's 14 dB gain at 3.5 GHz simplifies the CPE lineup by removing an extra driver stage, and its 30 V VDD operation matches common CPE power-supply rails. The NI-400S-2S surface-mount package is well suited to SMT-based CPE PCB assembly, lowering manufacturing cost versus the bolt-down NI-400-240 alternative. Per the NXP datasheet, the part's bias flexibility (Class AB or Class C) allows CPE designers to trade off linearity for efficiency depending on the link budget and antenna gain.
Empfohlen
Driver Stage for Higher-Power 3.5 GHz Amplifiers
When a link budget requires more than 8 W average at 3.5 GHz, two MRF7S38040HSR3 devices can be combined using a hybrid coupler or push-pull topology to reach 16 W+, or used as the driver stage for a higher-power final PA such as an NXP MRF8P-series LDMOS. The 14 dB typical gain at 3.5 GHz, 30 V VDD operation, and matched NI-400S-2S package footprint (per NXP datasheet) make the device a flexible building block for compound 3.5 GHz amplifier architectures. Designers should ensure 50-ohm isolation between combined stages and provide independent bias sequencing to avoid inrush damage during power-up.
Empfohlen
Fixed Wireless Access (FWA) 3.5 GHz Transmitter
FWA deployments in 3.5 GHz CBRS and adjacent bands often reuse WiMAX-tuned RF power stages for cost reasons. The MRF7S38040HSR3, characterized at 3.4-3.6 GHz with 8 W average Pout and 14 dB gain per NXP, can be evaluated for FWA transmitters, though EVM and ACPR must be re-measured for FWA-specific waveforms (e.g. LTE-like OFDMA). The lateral MOSFET's broadband nature supports moderate frequency retuning within the same package without changing the PCB land pattern. Designers should validate in-circuit performance against the FWA spectral mask before committing to production.
Empfohlen
Industrial / Scientific 3.5 GHz RF Power Source
Industrial RF heating, plasma generation, and scientific instrumentation occasionally require a stable 3.5 GHz CW or pulsed power source in the 5-20 W range. The MRF7S38040HSR3, rated at 8 W average Pout in WiMAX OFDM service per the NXP datasheet, can deliver CW output well above its average rating when biased appropriately, with the NI-400S-2S ceramic package supporting continuous-duty operation. The 30 V VDD operation matches standard industrial 24-28 V rectified rails with modest filtering. Designers should add circulator protection and VSWR foldback for any application where the load impedance is not perfectly controlled.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF7S38040HSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF7S38040HR3 | MRF7S38040HSR3 (NiPdAu) | MRF7S38010HSR3 | MRF8P26080HSR3 |
|---|---|---|---|---|---|
| Package | NI-400S-2S (SMT ceramic) | NI-400-240 (bolt-down ceramic) | NI-400S-2S - same | NI-400S-2S - same | NI-400S-2S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 3.4 - 3.6 GHz | 3.4 - 3.6 GHz | 3.4 - 3.6 GHz | 3.4 - 3.6 GHz | 2.5 - 2.7 GHz |
| Output Power (Avg) | 8 W | 8 W | 8 W | 1 W | 80 W |
| Drain Voltage (VDD) | 30 V | 30 V | 30 V | 30 V | 28 V |
| Mounting | Surface Mount (T&R) | Bolt-down flange | Surface Mount (T&R) | Surface Mount (T&R) | Surface Mount (T&R) |
| Primary Application | WiMAX 3.5 GHz BS PA | WiMAX 3.5 GHz BS PA | WiMAX 3.5 GHz BS PA | WiMAX 3.5 GHz driver/low-power | 2.6 GHz LTE/4G BS PA |
Wichtigste Unterscheidungsmerkmale
- Same-package NXP family coverage for 3.5 GHz WiMAX (vs. MRF7S38010HSR3)
- SMT-friendly ceramic package on tape and reel (vs. MRF7S38040HR3)
- Pin-compatible across NXP 3.5 GHz WiMAX family (vs. MRF8P26080HSR3)
Designhinweise
Estimated: at 8 W average output and 30 V VDD with ~30% WiMAX drain efficiency, the device dissipates roughly 19 W as heat (PD = VDD * IDQ - Pout, assuming IDQ ~ 0.9 A at full drive). The NI-400S-2S ceramic package requires a substantial copper heat-spreader pad plus external heatsink; without a heatsink the junction will exceed the 200 C maximum rating within seconds. Designers should solder the package to a PCB with a continuous ground-plane copper pour beneath and around the source flange, and mount an aluminum heatsink with thermal interface material.
The 3.4-3.6 GHz matching networks should be designed as 50-ohm microstrip lines on the substrate recommended in the NXP datasheet (typically RO4350B or similar low-loss ceramic-filled PTFE). Use 0201 or 0402-size ceramic chip capacitors and high-Q air-core or wire-wound inductors for the input/output matching. Keep the gate and drain traces short and isolated, place the bias feed inductors perpendicular to the RF path, and add 100 pF and 10 nF bypass capacitors right at the drain pin to suppress VDD ringing. The NI-400S-2S land pattern differs from the bolt-down NI-400-240 footprint - confirm against the NXP mechanical drawing before PCB layout.
Do not exceed VDD = 30 V or IDQ above 450 mA without recharacterizing thermal performance. Avoid operating the part without 50-ohm load at the RF output - WiMAX base-station antennas can present high VSWR under wind/ice, so include a circulator or VSWR foldback circuit. Bias sequencing matters: gate voltage should rise before drain voltage to avoid inrush current damage, and a small gate resistor (10-100 ohm) prevents RF oscillation. Finally, do not assume datasheet performance holds across the full 3.4-3.6 GHz band - WiMAX channels at the band edges may require matching-network retuning for optimal gain and efficiency.
Compliance-Informationen
RoHS, REACH, lead-free, halogen-free, MSL, and conflict-mineral compliance status were not confirmed from the provided web data; refer to NXP's product-compliance page or the full datasheet for authoritative values before production release.
