MRF8S19260HR6 vs MRF8S19260HSR6 Vergleich

Detaillierter Direktvergleich von MRF8S19260HR6 von NXP Semiconductors und MRF8S19260HSR6 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Aktiv
NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S19260HR6 MRF8S19260HSR6
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $96,40 $124,00
Transistortyp LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel, Dual
Technology Laterally Diffused Metal-Oxide Semiconductor (LDMOS) —
Frequency Range 1930 MHz to 1990 MHz —
Test Frequency 1.96 GHz (1960 MHz) 1.99 GHz
Drain-Source Voltage (V(BR)DSS) Rated 65 V —
Operating Drain Voltage (Test) 30 V —
Test Bias Current 1.6 A —
Average Output Power (Pout) 74 W —
Power Gain (Gp) 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A —
Drain Efficiency [DATA_NEEDED: typical % at rated conditions] —
Application Class Class AB or Class C —
Modulation Support CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE —
Gehäuse NI-1230-8 (ceramic bolt-down, 2-lead flange) —
Montageart Chassis / heatsink mount (bolt-down flange) Chassis / Flange Mount (through-hole RF bolt-down)
Lead-Free Status Yes —
RoHS-Status [DATA_NEEDED: confirm from NXP product page] Compliant
Manufacturer Freescale Semiconductor (now NXP Semiconductors) NXP Semiconductors (formerly Freescale)
Part Number — MRF8S19260HSR6
Frequency Band — 1930 MHz to 1990 MHz
Drain-Source Voltage (Max Rated) — 65 V
Operating Drain Voltage (Typical) — 30 V
Continuous Drain Current (Test) — 1.6 A
Output Power (CW / Avg) — 74 W average
Power Gain — 18.2 dB at 1.99 GHz
Gehäuse / Bauform — NI-1230S-8 (ceramic air-cavity bolt-down)
Lead Free Status — Compliant (per DigiKey listing)
Operating Mode — Class AB and Class C capable
Application — W-CDMA, CDMA, multi-carrier cellular base station PA

Datenblätter & Ressourcen

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