MRF8S19260HR6 vs MRF8S19260HSR6 对比
详细并排对比 MRF8S19260HR6 出自 NXP Semiconductors 和 MRF8S19260HSR6 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF8S19260HR6 | MRF8S19260HSR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $96.40 | $124.00 |
| 晶体管类型 | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Technology | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.96 GHz (1960 MHz) | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) Rated | 65 V | — |
| Operating Drain Voltage (Test) | 30 V | — |
| Test Bias Current | 1.6 A | — |
| Average Output Power (Pout) | 74 W | — |
| Power Gain (Gp) | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A | — |
| Drain Efficiency | [DATA_NEEDED: typical % at rated conditions] | — |
| Application Class | Class AB or Class C | — |
| Modulation Support | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE | — |
| 封装 | NI-1230-8 (ceramic bolt-down, 2-lead flange) | — |
| 安装类型 | Chassis / heatsink mount (bolt-down flange) | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead-Free Status | Yes | — |
| RoHS 状态 | [DATA_NEEDED: confirm from NXP product page] | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF8S19260HSR6 |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| 封装 / 外壳 | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Operating Mode | — | Class AB and Class C capable |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |