MRF8S19260HR6 vs MRF8S19260HSR6 Comparaison
Comparaison détaillée côte à côte de MRF8S19260HR6 par NXP Semiconductors et MRF8S19260HSR6 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF8S19260HR6 | MRF8S19260HSR6 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $96,40 | $124,00 |
| Type de transistor | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Technology | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.96 GHz (1960 MHz) | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) Rated | 65 V | — |
| Operating Drain Voltage (Test) | 30 V | — |
| Test Bias Current | 1.6 A | — |
| Average Output Power (Pout) | 74 W | — |
| Power Gain (Gp) | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A | — |
| Drain Efficiency | [DATA_NEEDED: typical % at rated conditions] | — |
| Application Class | Class AB or Class C | — |
| Modulation Support | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE | — |
| Boîtier | NI-1230-8 (ceramic bolt-down, 2-lead flange) | — |
| Type de montage | Chassis / heatsink mount (bolt-down flange) | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead-Free Status | Yes | — |
| Statut RoHS | [DATA_NEEDED: confirm from NXP product page] | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF8S19260HSR6 |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| Boîtier / Format | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Operating Mode | — | Class AB and Class C capable |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |