MRF8S9170NR3 vs MRF8S9220HSR3 Vergleich
Detaillierter Direktvergleich von MRF8S9170NR3 von NXP Semiconductors und MRF8S9220HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF8S9170NR3 | MRF8S9220HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $38,50 | $96,80 |
| Manufacturer | NXP Semiconductors | — |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | RF Power LDMOS | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Gehäuse | OM-780-2 (ceramic flange) | — |
| Montageart | Surface Mount / Flange Mount (bolt-down thermal pad) | Surface Mount / Flange Mount |
| Betriebstemperatur | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free (per DigChip listing) |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Gehäuse / Bauform | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Betriebs-Sperrschichttemperatur | — | -65 C to +225 C |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |