MRF8S9170NR3 vs MRF8S9220HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S9170NR3 par NXP Semiconductors et MRF8S9220HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF8S9170NR3 | MRF8S9220HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $38,50 | $96,80 |
| Manufacturer | NXP Semiconductors | — |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | RF Power LDMOS | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Boîtier | OM-780-2 (ceramic flange) | — |
| Type de montage | Surface Mount / Flange Mount (bolt-down thermal pad) | Surface Mount / Flange Mount |
| Température de fonctionnement | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free (per DigChip listing) |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Boîtier / Format | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Température de jonction en fonctionnement | — | -65 C to +225 C |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |