MRF8S9170NR3 vs MRF8S9220HSR3 Comparação
Comparação detalhada lado a lado de MRF8S9170NR3 por NXP Semiconductors e MRF8S9220HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF8S9170NR3 | MRF8S9220HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $38,50 | $96,80 |
| Manufacturer | NXP Semiconductors | — |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | RF Power LDMOS | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Encapsulamento | OM-780-2 (ceramic flange) | — |
| Tipo de montagem | Surface Mount / Flange Mount (bolt-down thermal pad) | Surface Mount / Flange Mount |
| Temperatura de operação | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free (per DigChip listing) |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Encapsulamento / Caixa | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Temperatura de junção de operação | — | -65 C to +225 C |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |