MRF8S9220HSR3 vs MRF8P9040NR1 Vergleich
Detaillierter Direktvergleich von MRF8S9220HSR3 von NXP Semiconductors und MRF8P9040NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S9220HSR3 | MRF8P9040NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $96,80 | $24,95 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | HV8 Lateral N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Gehäuse / Bauform | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| Betriebs-Sperrschichttemperatur | -65 C to +225 C | — |
| Montageart | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | — |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors |
| Transistortyp | — | N-Channel Lateral MOSFET (RF Power) |
| Operating Frequency Range | — | 728 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Gehäuse | — | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Pin-Anzahl | — | 4 (Drain on flange) |
| Modulation Formats Supported | — | CDMA, W-CDMA, LTE |
| PA Topology Suitability | — | Class AB, Class C |
| MSL-Level | — | 3 |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | Yes (per typical NXP HV8 family) |