MRF8S9220HSR3 vs MRF8P9040NR1 Comparaison
Comparaison détaillée côte à côte de MRF8S9220HSR3 par NXP Semiconductors et MRF8P9040NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S9220HSR3 | MRF8P9040NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $96,80 | $24,95 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | HV8 Lateral N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Boîtier / Format | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| Température de jonction en fonctionnement | -65 C to +225 C | — |
| Type de montage | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | — |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors |
| Type de transistor | — | N-Channel Lateral MOSFET (RF Power) |
| Operating Frequency Range | — | 728 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Boîtier | — | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Nombre de broches | — | 4 (Drain on flange) |
| Modulation Formats Supported | — | CDMA, W-CDMA, LTE |
| PA Topology Suitability | — | Class AB, Class C |
| Niveau MSL | — | 3 |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | Yes (per typical NXP HV8 family) |