MRF8S9220HSR3 vs MRF8P9040NR1 Сравнение
Подробное сравнение бок о бок MRF8S9220HSR3 от NXP Semiconductors и MRF8P9040NR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
MRF8S9220HSR3 ✓ АктивенNXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ АктивенСравнение характеристик
| Параметр | MRF8S9220HSR3 | MRF8P9040NR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $96,80 | $24,95 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | HV8 Lateral N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Корпус / Типоразмер | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| Рабочая температура перехода | -65 C to +225 C | — |
| Тип монтажа | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | — |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors |
| Тип транзистора | — | N-Channel Lateral MOSFET (RF Power) |
| Operating Frequency Range | — | 728 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Корпус | — | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Число выводов | — | 4 (Drain on flange) |
| Modulation Formats Supported | — | CDMA, W-CDMA, LTE |
| PA Topology Suitability | — | Class AB, Class C |
| Уровень MSL | — | 3 |
| Статус RoHS | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | Yes (per typical NXP HV8 family) |