MRF8S9220HSR3 vs MRF8P9040NR1 对比

详细并排对比 MRF8S9220HSR3 出自 NXP Semiconductors 和 MRF8P9040NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ 量产中
NXP Semiconductors
MRF8P9040NR1 MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 ✓ 量产中

规格对比

参数 MRF8S9220HSR3 MRF8P9040NR1
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $96.80 $24.95
Technology LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode HV8 Lateral N-Channel Enhancement-Mode
Frequency Range 920 MHz to 960 MHz —
Output Power (Avg, W-CDMA) 65 W —
Operating Drain Voltage (VDD) 28 V (typical) —
Drain-Source Voltage Rating (VDS max) 70 V —
Power Gain (typ) 19.4 dB —
Test Drain Current 1.6 A —
Drain Efficiency (typ) [DATA_NEEDED: drain efficiency %] —
封装 / 外壳 NI-780S (Case 465-06, Style 1), ceramic —
Package Dimensions (L x W x H) 20.7 mm x 9.91 mm x 4.32 mm —
Configuration Single-ended, 1-carrier W-CDMA —
工作结温 -65 C to +225 C —
安装类型 Surface Mount / Flange Mount Surface Mount / Flange Mount
Lead-Free / RoHS Lead Free (per DigChip listing) —
Modulation Support W-CDMA, CDMA, LTE (Class AB / Class C) —
Manufacturer — NXP Semiconductors
晶体管类型 — N-Channel Lateral MOSFET (RF Power)
Operating Frequency Range — 728 MHz to 960 MHz
Drain-Source Voltage (Vdss) Max — 70 V
Continuous Drain Current (Id) — 320 mA (per DigiKey listing)
Test Drain Supply Voltage — 28 V
Output Power (Pout) Avg — 4.0 W (CW / modulated at 28 V, 960 MHz)
Power Gain (Gps) at 960 MHz — 19.1 dB
封装 — TO-272 WB-4 (air-cavity overmold, 4 lead + flange)
引脚数量 — 4 (Drain on flange)
Modulation Formats Supported — CDMA, W-CDMA, LTE
PA Topology Suitability — Class AB, Class C
MSL 等级 — 3
RoHS 状态 — [DATA_NEEDED: RoHS status]
Lead-Free — Yes (per typical NXP HV8 family)

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