MRF8S9220HSR3 vs SRF8S9260HSR3 Vergleich

Detaillierter Direktvergleich von MRF8S9220HSR3 von NXP Semiconductors und SRF8S9260HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Aktiv
NXP Semiconductors
SRF8S9260HSR3 SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S9220HSR3 SRF8S9260HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $96,80 $92,50
Technology LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode —
Frequency Range 920 MHz to 960 MHz —
Output Power (Avg, W-CDMA) 65 W —
Operating Drain Voltage (VDD) 28 V (typical) —
Drain-Source Voltage Rating (VDS max) 70 V —
Power Gain (typ) 19.4 dB —
Test Drain Current 1.6 A —
Drain Efficiency (typ) [DATA_NEEDED: drain efficiency %] —
Gehäuse / Bauform NI-780S (Case 465-06, Style 1), ceramic —
Package Dimensions (L x W x H) 20.7 mm x 9.91 mm x 4.32 mm —
Configuration Single-ended, 1-carrier W-CDMA —
Betriebs-Sperrschichttemperatur -65 C to +225 C —
Montageart Surface Mount / Flange Mount Screw-mount, flange
Lead-Free / RoHS Lead Free (per DigChip listing) —
Modulation Support W-CDMA, CDMA, LTE (Class AB / Class C) —
Manufacturer — NXP Semiconductors (Freescale legacy)
Part Family — MRF8S9260 / SRF8S9260 HV8 series
Transistortyp — N-Channel Enhancement-Mode Lateral MOSFET
Application Band — 920-960 MHz (usable 865-960 MHz)
Output Power (Avg) — 75 W (W-CDMA, 28 V)
Drain-Source Voltage (VDS) — 28 V
Quiescent Drain Current (IDQ) — 1.7 A typical
Power Gain (Gps) — 18.6 dB at 960 MHz
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Gehäuse — NI-880S (ceramic, flanged)
Operating Mode — Class AB or Class C
Modulation Targets — CDMA, W-CDMA, multicarrier GSM
RoHS-Status — Compliant
Lead-Free — Yes

Datenblätter & Ressourcen

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