MRF8S9220HSR3 vs SRF8S9260HSR3 비교
다음의 상세 나란히 비교: MRF8S9220HSR3 제조: NXP Semiconductors 및 SRF8S9260HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S9220HSR3 | SRF8S9260HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $96.80 | $92.50 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| 패키지 / 케이스 | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| 동작 접합 온도 | -65 C to +225 C | — |
| 실장 유형 | Surface Mount / Flange Mount | Screw-mount, flange |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | — |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors (Freescale legacy) |
| Part Family | — | MRF8S9260 / SRF8S9260 HV8 series |
| 트랜지스터 유형 | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Application Band | — | 920-960 MHz (usable 865-960 MHz) |
| Output Power (Avg) | — | 75 W (W-CDMA, 28 V) |
| Drain-Source Voltage (VDS) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 1.7 A typical |
| Power Gain (Gps) | — | 18.6 dB at 960 MHz |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| 패키지 | — | NI-880S (ceramic, flanged) |
| Operating Mode | — | Class AB or Class C |
| Modulation Targets | — | CDMA, W-CDMA, multicarrier GSM |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |