MRF8S9220HSR3 vs SRF8S9260HSR3 Comparação

Comparação detalhada lado a lado de MRF8S9220HSR3 por NXP Semiconductors e SRF8S9260HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Ativo
NXP Semiconductors
SRF8S9260HSR3 SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF8S9220HSR3 SRF8S9260HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $96,80 $92,50
Technology LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode —
Frequency Range 920 MHz to 960 MHz —
Output Power (Avg, W-CDMA) 65 W —
Operating Drain Voltage (VDD) 28 V (typical) —
Drain-Source Voltage Rating (VDS max) 70 V —
Power Gain (typ) 19.4 dB —
Test Drain Current 1.6 A —
Drain Efficiency (typ) [DATA_NEEDED: drain efficiency %] —
Encapsulamento / Caixa NI-780S (Case 465-06, Style 1), ceramic —
Package Dimensions (L x W x H) 20.7 mm x 9.91 mm x 4.32 mm —
Configuration Single-ended, 1-carrier W-CDMA —
Temperatura de junção de operação -65 C to +225 C —
Tipo de montagem Surface Mount / Flange Mount Screw-mount, flange
Lead-Free / RoHS Lead Free (per DigChip listing) —
Modulation Support W-CDMA, CDMA, LTE (Class AB / Class C) —
Manufacturer — NXP Semiconductors (Freescale legacy)
Part Family — MRF8S9260 / SRF8S9260 HV8 series
Tipo de transistor — N-Channel Enhancement-Mode Lateral MOSFET
Application Band — 920-960 MHz (usable 865-960 MHz)
Output Power (Avg) — 75 W (W-CDMA, 28 V)
Drain-Source Voltage (VDS) — 28 V
Quiescent Drain Current (IDQ) — 1.7 A typical
Power Gain (Gps) — 18.6 dB at 960 MHz
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Encapsulamento — NI-880S (ceramic, flanged)
Operating Mode — Class AB or Class C
Modulation Targets — CDMA, W-CDMA, multicarrier GSM
Status RoHS — Compliant
Lead-Free — Yes

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