MW7IC2240NBR1 vs MW7IC2220NBR1 Vergleich
Detaillierter Direktvergleich von MW7IC2240NBR1 von NXP Semiconductors und MW7IC2220NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ AktivSpezifikationsvergleich
| Parameter | MW7IC2240NBR1 | MW7IC2220NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $29,00 | $21,50 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 300 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| Gehäuse | TO-272 WB-16 (over-molded plastic, 16-lead) | — |
| Montageart | Surface Mount | Surface Mount (flange/over-molded) |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | — |
| Funktion | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |