MW7IC2240NBR1 vs MW7IC2220NBR1 비교
다음의 상세 나란히 비교: MW7IC2240NBR1 제조: NXP Semiconductors 및 MW7IC2220NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ 활성사양 비교
| 파라미터 | MW7IC2240NBR1 | MW7IC2220NBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | RF Amplifiers | RF Amplifiers |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $29.00 | $21.50 |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 300 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| 패키지 | TO-272 WB-16 (over-molded plastic, 16-lead) | — |
| 실장 유형 | Surface Mount | Surface Mount (flange/over-molded) |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance] | — |
| 기능 | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |