N25Q016A11EV7A0 vs N25Q032A13EV7A0 Vergleich
Detaillierter Direktvergleich von N25Q016A11EV7A0 von Micron Technology und N25Q032A13EV7A0 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q016A11EV7A0 | N25Q032A13EV7A0 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,35 |
| Speichertyp | FLASH - NOR Memory IC | NOR Flash (SPI) |
| Speichergröße | 16 Mbit (2 MB) | — |
| Schnittstelle | SPI | SPI |
| Maximale Taktfrequenz | 108 MHz | — |
| Versorgungsspannung | 1.8 V (V11 grade) | 2.7 V to 3.6 V |
| Gehäuse | 8-pin WSON (DFN-8 style, EV suffix) | VDFPN8 (8-lead MLP8) |
| Montageart | Surface Mount | Surface Mount |
| Protocol Support | Standard SPI, Dual SPI, Quad SPI | — |
| Programming | Page program, sector/block erase | — |
| Family | N25Q | — |
| Speed Grade | 108 MHz (highest N25Q 16Mbit grade) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | -40C to +125C |
| Erase/Program Cycles | [DATA_NEEDED: Endurance] | — |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Package Dimensions | [DATA_NEEDED: Package Dimensions] | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Density | — | 32 Mbit (4 MB) |
| Speicherorganisation | — | 8M x 4 die |
| Max Clock Frequency | — | 108 MHz |
| Memory Format | — | Flash (NOR) |
| Write Cycle Endurance | — | [DATA_NEEDED: endurance cycles] |
| Access Time | — | [DATA_NEEDED: read access time] |
| Program/Erase Modes | — | Page program, sector erase, bulk erase |
| MSL-Level | — | [DATA_NEEDED: MSL] |
| Packaging | — | Tape & Reel (tray options may exist) |