N25Q512A83G12A0F vs N25Q256A83ESFA0F Vergleich
Detaillierter Direktvergleich von N25Q512A83G12A0F von Micron Technology und N25Q256A83ESFA0F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q512A83G12A0F | N25Q256A83ESFA0F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,20 | $2,05 |
| Speichertyp | Flash - NOR Memory IC | NOR Flash, Serial SPI |
| Memory Capacity | 512 Mbit (64 MB) | — |
| Speicherorganisation | 128M x 4 | 32M x 8 |
| Schnittstelle | SPI - Multiple I/O (Standard/Dual/Quad) | SPI, Multiple I/O (Single/Dual/Quad) |
| Clock Frequency | 108 MHz | — |
| Versorgungsspannung | 2.7 V to 3.6 V (3V class) | 3 V (2.7 V to 3.6 V) |
| Cell Type | SLC | — |
| Sector Erase Size | 4 KB | 4 KB |
| Gehäuse | 24-T-PBGA (6x8 mm) | 16-SOIC Wide (16SO) |
| Package Structure | Dual-Die Package (DDP) | — |
| Montageart | Surface Mount | Surface Mount |
| Program/Erase Protection | Software and hardware write protection | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 256 Mbit (32 MB) |
| Max Clock Frequency | — | 108 MHz |
| Technology | — | 65nm NOR |
| Eigenschaften | — | Execute-In-Place (XIP), Advanced Write Protection |
| Packaging | — | Tape & Reel (TR) |
| Grade | — | Industrial |