N25Q512A83G12A0F vs N25Q256A83ESFA0F 对比
详细并排对比 N25Q512A83G12A0F 出自 Micron Technology 和 N25Q256A83ESFA0F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | N25Q512A83G12A0F | N25Q256A83ESFA0F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.20 | $2.05 |
| 存储器类型 | Flash - NOR Memory IC | NOR Flash, Serial SPI |
| Memory Capacity | 512 Mbit (64 MB) | — |
| 存储组织 | 128M x 4 | 32M x 8 |
| 接口 | SPI - Multiple I/O (Standard/Dual/Quad) | SPI, Multiple I/O (Single/Dual/Quad) |
| Clock Frequency | 108 MHz | — |
| 电源电压 | 2.7 V to 3.6 V (3V class) | 3 V (2.7 V to 3.6 V) |
| Cell Type | SLC | — |
| Sector Erase Size | 4 KB | 4 KB |
| 封装 | 24-T-PBGA (6x8 mm) | 16-SOIC Wide (16SO) |
| Package Structure | Dual-Die Package (DDP) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Program/Erase Protection | Software and hardware write protection | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 256 Mbit (32 MB) |
| Max Clock Frequency | — | 108 MHz |
| Technology | — | 65nm NOR |
| 特性 | — | Execute-In-Place (XIP), Advanced Write Protection |
| Packaging | — | Tape & Reel (TR) |
| Grade | — | Industrial |