PJA3415 vs PJA3415AE Vergleich

Detaillierter Direktvergleich von PJA3415 von Panjit und PJA3415AE von Panjit. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter PJA3415 PJA3415AE
Marke Panjit Panjit
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,05 $0,14
Transistortyp P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) 4 A (TA = 25C) —
Power Dissipation (PD) 1.25 W (TA = 25C) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
On-Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gehäuse SOT-23 SOT-23 (3-pin, surface mount)
Montageart Surface Mount Surface Mount
Anzahl der Pins 3 —
Betriebstemperaturbereich -55C to +150C (junction) -55C to +150C (junction, [DATA_NEEDED: exact Tj max in datasheet])
Junction-to-Ambient Thermal Resistance (RθJA) [DATA_NEEDED: theta_JA value] —
Manufacturer Panjit International Inc. —
RoHS-Status Compliant Compliant (per Panjit product page)
MSL-Level [DATA_NEEDED: MSL rating] Level 1 (JEDEC J-STD-020, [DATA_NEEDED: confirm in datasheet])
Polarity — P-Channel
Drain-Source Voltage (Vdss) — -20 V
Continuous Drain Current (Id) — -4.3 A (Ta)
Power Dissipation (Pd) — 1.25 W (Ta)
Operating Mode — Enhancement Mode
ESD Protection — Yes (gate-integrated, -AE variant)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) min/typ/max]
On-Resistance (Rds(on)) — [DATA_NEEDED: Rds(on) at Vgs]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Thermal Resistance (RthJA) — [DATA_NEEDED: theta_JA C/W for SOT-23 board]

Datenblätter & Ressourcen

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