PJA3415AE vs PJA3415 Vergleich

Detaillierter Direktvergleich von PJA3415AE von Panjit und PJA3415 von Panjit. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter PJA3415AE PJA3415
Marke Panjit Panjit
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,14 $0,05
Polarity P-Channel —
Drain-Source Voltage (Vdss) -20 V —
Continuous Drain Current (Id) -4.3 A (Ta) —
Power Dissipation (Pd) 1.25 W (Ta) —
Operating Mode Enhancement Mode —
ESD Protection Yes (gate-integrated, -AE variant) —
Gehäuse SOT-23 (3-pin, surface mount) SOT-23
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +150C (junction, [DATA_NEEDED: exact Tj max in datasheet]) -55C to +150C (junction)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) min/typ/max] —
On-Resistance (Rds(on)) [DATA_NEEDED: Rds(on) at Vgs] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Thermal Resistance (RthJA) [DATA_NEEDED: theta_JA C/W for SOT-23 board] —
MSL-Level Level 1 (JEDEC J-STD-020, [DATA_NEEDED: confirm in datasheet]) [DATA_NEEDED: MSL rating]
RoHS-Status Compliant (per Panjit product page) Compliant
Transistortyp — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) — 4 A (TA = 25C)
Power Dissipation (PD) — 1.25 W (TA = 25C)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
On-Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Anzahl der Pins — 3
Junction-to-Ambient Thermal Resistance (RθJA) — [DATA_NEEDED: theta_JA value]
Manufacturer — Panjit International Inc.

Datenblätter & Ressourcen

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